Flux - dependent scaling behavior in Cu ( 100 ) submonolayer homoepitaxy Anna
نویسندگان
چکیده
The average separation of two-dimensional islands in Cu(100) submonolayer homoepitaxy as a function of the deposition flux at 213 K has been studied using spot profile analysis low-energy electron diffraction. As the flux decreases, a large change in the apparent critical island size, from one to a value between seven and 12 atoms, is obtained even though the temperature is held constant. This is shown to be consistent with a recently proposed dimer shearing mechanism which has a significant influence on the stability of islands with eight atoms or less. ~) 1997 Elsevier Science B.V.
منابع مشابه
Nucleation, growth, and kinetic roughening of metal(100) homoepitaxial thin films
A unified analysis is presented of submonolayer nucleation and growth of two-dimensional islands and the subsequent transition to multilayer growth during metal-on-unreconstructed metal(100) homoepitaxy. First, we review and augment recent developments in submonolayer nucleation theory for general critical size i (above which islands are effectively stable against dissociation). We discuss choi...
متن کاملIsland-size distributions in submonolayer epitaxial growth: Influence of the mobility of small clusters.
We examine the influence of dimer mobility on the size distribution of two-dimensional islands formed by irreversible nucleation and growth during deposition. We first characterize the transition in scaling of the mean island density with increasing dimer mobility, from the classic form described by Venables [Philos. Mag. 27, 697 (1973)] to the modified form for "rapid" mobility described by Vi...
متن کاملDiffusion and submonolayer island growth during hyperthermal deposition on Cu(100) and Cu(111)
We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To this end, we incorporate realistic size and temperature-dependent island diffusion coefficients for the case of homoepitaxial growth on Cu(100) and Cu(111) surf...
متن کاملEpitaxial growth of Cu on Cu„001...: Experiments and simulations
A quantitative comparison between experimental and Monte Carlo simulation results for the epitaxial growth of Cu/Cu~001! in the submonolayer regime is presented. The simulations take into account a complete set of hopping processes whose activation energies are derived from semiempirical calculations using the embedded-atom method. The island separation is measured as a function of the incoming...
متن کاملKinetic Monte Carlo Simulation of Epitaxial Thin Film Growth: Formation of Submonolayer Islands and Multilayer Mounds
We consider homoepitaxy (or low-misfit heteroepitaxy) via vapor deposition or MBE under UHV conditions. Thin film growth is initiated by nucleation and growth of 2D islands in the submonolayer regime. For atoms subsequently deposited on top of islands, a step edge barrier often inhibits downward transport and produces kinetic roughening during multilayer growth. Such unstable growth is characte...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2002